Abstracting and Indexing

  • Google Scholar
  • CrossRef
  • WorldCat
  • ResearchGate
  • Academic Keys
  • DRJI
  • Microsoft Academic
  • Academia.edu
  • OpenAIRE

Temperature Induced Microstructural Changes in InGaN/GaN Quantum Wells Observed by Electron Microscopy

Author(s): Alexandra Gkanatsiou, Christos B Lioutas, Ewa Grzanka, Mike Leszczynski

The present work concerns the microstructural characterization of multiple InGaN/GaN Quantum Well (QW) structures grown onto GaN on sapphire templates by Metalorganic Chemical Vapor Phase Epitaxy (MOVPE), using electron microscopy techniques (Transmission Electron Microscopy-TEM and Scanning Electron Microscopy-SEM). The TEM characterization showed V-shaped defects, including V-pits and trench defects on the surface of the as-grown sample. Post-growth annealing experiments were performed in order to determine whether a structural degradation of the structure has taken place. After annealing a very small density of V-defects was observed, having a beneficial impact on optoelectronics performance. The presence of sharp interfaces between the InGaN QWs and the GaN barriers gave us an indication of their good structural quality.

Journal Statistics

Impact Factor: * 1.2

CiteScore: 2.9

Acceptance Rate: 11.01%

Time to first decision: 10.4 days

Time from article received to acceptance: 2-3 weeks

Discover More: Recent Articles

Grant Support Articles

© 2016-2024, Copyrights Fortune Journals. All Rights Reserved!